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CFDRC has developed integrated NanoTCAD software for designing
a variety of nanolectronic devices using multidimensional Kinetic
and Quantum models for high-field nonlocal nonequilibrium and quantum
transport (submicron diodes, nano-MOSFET transistors, quantum barrier
devices, and others).
NanoTCAD provides advanced tools for
simulations of non-local non-equilibrium high field transport in
semiconductors. The salient features of these tools include the
following:
- NanoTCAD input tools allow convenient and fast building models of different architectures
- Script-based parametric design and optimization tools.
- Automatic, script-based runs to obtain I-V characteristics.
- Postprocessor for detailed data and results visualization.
- Transient simulation. Fast solution.
Kinetic and Quantum models include:
- Multidimensional kinetic models, based on 4D Boltzmann equation
(3D+ENERGY)
- Key transport phenomena are incorporated in Boltzmann transport equation
- Fast efficient multi-dimensional solver and visualization tools
- Boltzmann transport equation solver validated on experimental data and Monte-Carlo simulation results
- Spatially and time dependent temperature solution included into gain and refractive index models.
Such advanced models are required to
predict realistic behavior of nonequilibrium transport in nano-scale
devices at high field.
NEMO (Nanoelectronic Modeling) - A Comprehensive Quantum Device Simulator
NEMO is a simulation program that calculates the electronic characteristics
of 1-dimensional quantum devices. Nanoelectronics Group at Raytheon
TI Systems developed NEMO, a new quantum device simulator that simulates
a wide variety of quantum devices, including RTDs, HEMTs, HBTs,
superlattices, and Esaki diodes. CFDRC is currently exploring commercialization
options to market NEMO in cooperation with Raytheon and JPL. The efforts are documented in the NEMO at CFDRC home page. CFDRC is the new
commercial development home of NEMO. Please send inquiries to nemo@cfdrc.com.
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Boltzmann solution for the electron energy distributions f(E, x) in a
semiconductor, with distance x covered. Electric field F=105 V/cm.
(Parameters for Si: m*/ m=0.22, l=282
Å, hw=29 meV, T=300 K.). Results from
NanoTCAD kinetic solver
I-V curves for short 0.10 micron Si n+nn+ diode. Dimensions of
n+, n, and n+ regions are 0.05mm, 0.10mm
and 0.05mm respectively. Published BTE solution and both HD and
BTE models in NanoTCAD compare well. Classical DD by PISCES provides
30% lower current.
How the Kinetic Solution is obtained.
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